Xband microwave motion sensor module application note v1. Explore siemens buz90af and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Semtech plastic silicon rectifiers,alldatasheet, datasheet, datasheet search site for electronic. Thermal data rthjcase thermal resistance junctioncase max 0. Ordering information note 4 device packaging shipping.
Dm74ls266 quad 2input exclusivenor gate physical dimensions inches millimeters unless otherwise noted continued 14lead plastic dualinline package pdip, jedec ms001, 0. This data sheet provides information on subminiature size, axial lead mounted. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. Bidirectional diac trigger diode db3a taitron components.
Electrical characteristics, at tj 25c, unless otherwise specified. If its not shown correctly, click here to open the file on a separate window. Type vdss rdson id buz10 50 v teccorr brand thyristors datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Siemens, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current high forward surge capability solder dip 275 c max. Datasheet search engine for electronic components and semiconductors. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. This unique little device is useful accurate method for detecting change in velocity using the doppler effect, commonly known as a radar speed gun.
Vce vcev vce vcev tc 100 oc 1 5 ma ma icev collector cutoff current vbe 1. C 1n4001 1n4007 general purpose rectifiers glass passivated absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. G60n100 datasheet v, 60a, npt trench igbt fairchild, fgl60n100bntd datasheet, g60n100 pdf, g60n100 pinout, g60n100 circuit, g60n100 schematic. Requires additional circuitry for amplification of the signal, in attachments. Diode, standard, 1 a, 50 v 1n4001 diode, standard, 1 a, 100 v 1n4002 diode, standard, 1 a, 200 v 1n4003 diode, standard, 1 a, 600 v 1n4005 diode, standard, 1 a, 800 v 1n4006 important notice. Cd104 please refer to the sales offices on our website for a representative near you. Hb 100 microwave sensor module low current consumption cw or pulse operation flat profile long detection range hb100 miniature microwave motion sensor is a xband bistatic doppler transceiver module. First digit of the datecode being z or k identifies silicon characterized in this datasheet.
High power npn silicon transistor stmicroelectronics. Buz 90 a sipmos power transistor n channel enhancement mode avalancherated pin 1 pin 2 pin 3 g d s type vds id rdson package ordering code buz 90 a 600 v 4 a 2. Link gray means no datasheets were found but will suggest similar words for which there are datasheets in our database. Sipmos power transistor n channel enhancement mode avalancherated d vd t rated, buz100 datasheet, buz100 circuit, buz100 data sheet.
Irfz24 datasheet, irfz24 pdf, irfz24 data sheet, datasheet, data sheet, pdf home all manufacturers by category part name, description or manufacturer contain. Xband microwave motion sensor module application note. Sipmos power transistor n channel enhancement mode avalancherated d v d t rated, buz100 datasheet, buz100 circuit, buz100 data sheet. Reverse diode inverse diode continuous forward current tc 25 c is 60 a inverse diode direct current,pulsed tc 25 c ism 240 inverse diode forward voltage vgs 0 v, if 120 a vsd 1. C2 fgl60n100bntd v, 60 a npt trench igbt march 2014 absolute maximum ratings. Nchannel enhancement mode pin description fieldeffect transistor in a plastic envelope using trench 1 gate technology. G60n100 datasheet v, 60a, npt trench igbt fairchild. Buz 100 electrical characteristics, at tj 25c, unless otherwise specified parameter symbol values unit min. Semiconductor reserves the right to make changes at any time without notice in order to improve design. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it.
1578 279 219 437 52 1079 457 885 269 1013 78 559 108 1181 841 687 530 207 200 1272 661 1297 1418 1514 1308 6 313 912 519 800 31 979 52 1294 314 1404 655 53 615 695 737 1248 1054 228 846 1235 795